Semiconductors having electrically coupled gate and impurity doped regions
and methods for fabricating the same are provided. A method in accordance
with an embodiment of the invention comprises forming a gate electrode
overlying a substrate and an impurity doped region within the substrate.
A first spacer is formed on a first side and a second spacer on a second
side of the gate electrode. An ion is implanted into the first spacer
with an angle greater than zero from an axis perpendicular to the surface
of the substrate. The first spacer is etched to remove a portion thereof
and a silicon film is deposited overlying a remainder of the first
spacer, the impurity doped region and the second spacer. The silicon film
is etched, forming a silicon spacer, and a silicide-forming metal is
deposited to form a silicide contact that electrically couples the gate
electrode and the impurity doped region.