A capacitor is provided having a first electrode including a layer of
low-resistance non-silicon material. The capacitor includes a layer of
silicon formed on the low-resistance material layer and a capacitor
dielectric formed on the layer of silicon. A second electrode is formed
on the capacitor dielectric, the second electrode including at least a
material selected from the group consisting of metals, low-resistance
compounds of metals, and deposited semiconductors having a dopant
concentration of at least 1.times.10.sup.17 cm.sup.-3.