A capacitor is provided having a first electrode including a layer of low-resistance non-silicon material. The capacitor includes a layer of silicon formed on the low-resistance material layer and a capacitor dielectric formed on the layer of silicon. A second electrode is formed on the capacitor dielectric, the second electrode including at least a material selected from the group consisting of metals, low-resistance compounds of metals, and deposited semiconductors having a dopant concentration of at least 1.times.10.sup.17 cm.sup.-3.

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> Method of forming a device having a gate with a selected electron affinity

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