An electronic device includes a conductive n-type substrate, a Group III
nitride active region, an n-type Group III-nitride layer in vertical
relationship to the substrate and the active layer, at least one p-type
layer, and means for providing a non-rectifying conductive path between
the p-type layer and the n-type layer or the substrate. The
non-rectifying conduction means may include a degenerate junction
structure or a patterned metal layer.