A method and apparatus for an electronic substrate having a plurality of
semiconductor devices is described. A thin film of nanowires is formed on
a substrate. The thin film of nanowires is formed to have a sufficient
density of nanowires to achieve an operational current level. A plurality
of semiconductor regions are defined in the thin film of nanowires.
Contacts are formed at the semiconductor device regions to thereby
provide electrical connectivity to the plurality of semiconductor
devices. Furthermore, various materials for fabricating nanowires, thin
films including p-doped nanowires and n-doped nanowires, nanowire
heterostructures, light emitting nanowire heterostructures, flow masks
for positioning nanowires on substrates, nanowire spraying techniques for
depositing nanowires, techniques for reducing or eliminating phonon
scattering of electrons in nanowires, and techniques for reducing surface
states in nanowires are described.