A memory cell with a charge trapping structure has multiple bias arrangements. Multiple cycles of applying the bias arrangements lowering and raising a threshold voltage of the memory cell leave a distribution of charge in the charge trapping layer. The charge interferes with the threshold voltage achievable in the memory cell. This distribution of charge is balanced by applying a charge balancing bias arrangement at intervals during which a plurality of program and erase cycles occurs. Also, the charge balancing bias arrangement is applied prior to the beginning of program and erase cycles of the memory cell.

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> Method and apparatus for programming nonvolatile memory

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